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The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove, of Fairchild Semiconductor. == Physical assumptions == The model assumes that oxidation reaction occurs at the interface between the oxide and the substrate, rather than between the oxide and the ambient gas. Thus, it considers three phenomena that the oxidizing species undergoes, in this order: # It diffuses from the bulk of the ambient gas to the surface. # It diffuses through the existing oxide layer to the oxide-substrate interface. # It reacts with the substrate. The model assumes that each of these stages proceeds at a rate proportional to the oxidant's concentration. In the first case, this means Henry's law; in the second, Fick's law of diffusion; in the third, a first-order reaction with respect to the oxidant. It also assumes steady state conditions, i.e. that transient effects do not appear. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Deal–Grove model」の詳細全文を読む スポンサード リンク
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